1. The tungsten copper electronic packaging material has an adjustable thermal expansion coefficient, which can be matched with different substrates (such as: stainless steel, valve alloy, silicon, gallium arsenide, gallium nitride, aluminum oxide, etc.); 2. No sintering activation elements are added to maintain good thermal conductivity; 3. Low porosity and good air tightness; 4. Good size control, surface finish and flatness. 5. Provide sheet, formed parts, also can meet the needs of electroplating.| Material Grade | Tungsten Content Wt% | Density g/cm3 | Thermal Expansion ×10-6 CTE(20℃) | Thermal Conductivity W/(M·K) |
| 90WCu | 90±2% | 17.0 | 6.5 | 180 (25℃) /176 (100℃) |
| 85WCu | 85±2% | 16.4 | 7.2 | 190 (25℃)/ 183 (100℃) |
| 80WCu | 80±2% | 15.65 | 8.3 | 200 (25℃) / 197 (100℃) |
| 75WCu | 75±2% | 14.9 | 9.0 | 230 (25℃) / 220 (100℃) |
| 50WCu | 50±2% | 12.2 | 12.5 | 340 (25℃) / 310 (100℃) |

Materials suitable for packaging with high-power devices, such as substrates, lower electrodes, etc.; high-performance lead frames; thermal control boards and radiators for military and civilian thermal control devices.